MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 63

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 26: Terminating a READ Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
CK
CK
3
3
Notes:
Bank a,
Col n
Bank a,
Col n
READ
READ
T0
T0
1. BL = 4, 8, or 16.
2. BST = BURST TERMINATE command; page remains open.
3. D
4. Shown with nominal
5. CKE = HIGH.
1
1
OUT
CL = 2
n = data-out from column n.
BST
BST
T1
T1
CL = 3
2
2
T1n
D
t
OUT
AC,
T2
NOP
T2
NOP
63
t
DQSCK, and
D
T2n
OUT
T2n
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
D
Don’t Care
OUT
T3n
T4
T4
NOP
NOP
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
T5
T5
NOP
NOP