MMPQ2222A Fairchild Semiconductor, MMPQ2222A Datasheet

TRANSISTOR NPN 40V 500MA 16-SOIC

MMPQ2222A

Manufacturer Part Number
MMPQ2222A
Description
TRANSISTOR NPN 40V 500MA 16-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMPQ2222A

Transistor Type
4 NPN (Quad)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Transistor Polarity
NPN
Number Of Elements
4
Collector-emitter Voltage
40V
Collector-base Voltage
75V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Power Dissipation
1W
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
16
Package Type
SOIC N
Configuration
Quad Dual Collector
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMPQ2222ATR

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1998 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
C
Symbol
D
J
CEO
CBO
EBO
JA
*
Thermal Characteristics
NPN Multi-Chip General Purpose Amplifier
Absolute Maximum Ratings*
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SC70-6
Mark: .1P
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
FFB2222A
C1
B2
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
E2
pin #1
Effective 4 Die
Each Die
Derate above 25 C
E1
Characteristic
B1
C2
Parameter
C1
T
FMB2222A
A
SuperSOT -6
Dot denotes pin #1
= 25°C unless otherwise noted
E1
Mark: .1P
C2
T
A
= 25°C unless otherwise noted
pin #1
B1
FFB2222A
E2
300
415
2.4
B2
MMPQ2222A
FMB2222A
SOIC-16
Mark:
Max
E1
700
180
5.6
MMPQ2222A
-55 to +150
B1
Value
E2
500
5.0
40
75
B2
pin #1
E3
MMPQ2222A
B3
C1
1,000
E4
125
240
8.0
C1
B4
C2
C2
Units
C3
mA
V
V
V
C3
C
mW/ C
Units
C4
mW
C/W
C/W
C/W
C4
4

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MMPQ2222A Summary of contents

Page 1

... A Parameter T = 25°C unless otherwise noted A FFB2222A 300 2.4 415 MMPQ2222A SOIC- Mark: pin #1 MMPQ2222A Value Units 5.0 V 500 mA -55 to +150 C Max Units FMB2222A MMPQ2222A 700 1,000 mW 5.6 8.0 mW/ C 180 C/W 125 C/W 240 C/W 4 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 320 240 160 100 I - COLLECTOR CURRENT (mA) ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics COLLECTOR CURRENT ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time 0 200ns FIGURE 2: Saturated Turn-Off Switching Time NPN Multi-Chip General Purpose Amplifier 1.0 K 500 - 1 1 (continued) ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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