FMB5551 Fairchild Semiconductor, FMB5551 Datasheet
FMB5551
Manufacturer Part Number
FMB5551
Description
TRANSISTOR NPN 160V 600MA SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMB5551.pdf
(3 pages)
Specifications of FMB5551
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
700mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
0.7 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
• This device is designed for general purpose high voltage amplifiers
• Sourced from process 16.
• See MMBT5551 for characteristics.
Absolute Maximum Ratings
* Pd total, for both transistors. For each transistor, Pd = 350mW.
Electrical Characteristics
V
V
V
I
P
T
T
R
Off Characteristics
BV
BV
BV
I
I
On Characteristics
h
V
V
Small Signal Characteristics
C
C
f
NF
h
C
CBO
EBO
T
and gas discharge display driving.
FE
FE
J
STG
CEO
CBO
EBO
C
CE
BE
ob
ib
Symbol
JA
CBO
EBO
CEO
Symbol
(sat)
(sat)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Parameter
T
a
a
=25 C unless otherwise noted
=25 C) *
T
Parameter
a
=25 C unless otherwise noted
FMB5551
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
V
f = 100MHz
V
f = 1MHz, R
V
f = 1KHz
C
C
E
C
C
C
C
CB
CB
EB
CE
CE
CE
CB
CB
CE
CE
CE
= 10 A
= 10 A
= 10mA, I
= 10mA, I
= 1mA
= 50mA, I
= 50mA, I
= 120V
= 120V, T = 100 C
= 4V
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 0.5V, f = 1MHz
= 10V, I
= 5V, I
= 10V, I
Test Condition
C
C
C
C
S
B
B
C
C
B
B
= 1mA
= 10mA
= 50mA
= 200 A
= 1mA
= 1mA
= 2k , B = 200Hz
= 5mA
= 5mA
= 10mA
= 1mA
C1
- 55 ~ 150
Min.
160
180
100
80
80
30
50
6
Value
E1
160
180
600
150
180
0.7
6
pin #1
C2
Typ.
TYPICAL
Dot denotes pin #1
SuperSOT
B1
Mark: .3S
E2
Max.
0.15
250
300
250
0.2
50
50
20
50
1
1
6
8
B2
Rev. A1, August 2004
Units
TM
mA
C/W
W
V
V
V
C
C
-6
Units
MHz
nA
nA
pF
pF
dB
V
V
V
V
V
A
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FMB5551 Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE Small Signal Characteristics C Output Capacitance ob C Input Capacitance ib f Current gain Bandwidth Product T NF Noise Figure h Small Signal Current Gain FE ©2004 Fairchild Semiconductor Corporation FMB5551 T =25 C unless otherwise noted a Parameter = =25 C unless otherwise noted a Test Condition I = 1mA ...
Page 2
... Package Dimensions ©2004 Fairchild Semiconductor Corporation SuperSOT -6 TM Dimensions in Millimeters Rev. A1, August 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...