FMB3906 Fairchild Semiconductor, FMB3906 Datasheet
FMB3906
Manufacturer Part Number
FMB3906
Description
TRANSISTOR PNP 40V SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMB3906.pdf
(6 pages)
Specifications of FMB3906
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
700mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
0.7 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1998 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
Symbol
C
D
J
Thermal Characteristics
CEO
CBO
EBO
JA
PNP Multi-Chip General Purpose Amplifier
, T
*
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
SC70-6
Mark: .2A
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
C1
FFB3906
B2
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
E2
pin #1
Effective 4 Die
Each Die
Derate above 25 C
E1
B1
Characteristic
C2
Parameter
C1
T
A
FMB3906
= 25°C unless otherwise noted
SuperSOT -6
Dot denotes pin #1
E1
Mark: .2A
C2
T
A
= 25°C unless otherwise noted
pin #1
B1
FFB3906
E2
300
415
2.4
B2
Mark: MMPQ3906
SOIC-16
FMB3906
Max
E1
700
180
5.6
MMPQ3906
B1
-55 to +150
Value
E2
200
5.0
40
40
B2
pin #1
E3
MMPQ3906
B3
C1
1,000
E4
125
240
8.0
C1
B4
C2
C2
C3
Units
mA
C3
V
V
V
C
mW/ C
Units
C4
mW
C/W
C/W
C/W
C4
4
Related parts for FMB3906
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FMB3906 Summary of contents
Page 1
... Dot denotes pin # 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A FFB3906 300 2.4 415 MMPQ3906 SOIC-16 pin #1 Value Units 5.0 V 200 mA -55 to +150 C Max Units FMB3906 MMPQ3906 700 1,000 mW 5.6 8.0 mW/ C 180 C/W 125 C/W 240 C/W 4 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...
Page 3
Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...
Page 4
Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...
Page 5
Typical Characteristics Voltage Feedback Ratio 100 COLLE CTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT ( mA) C PNP Multi-Chip General Purpose Amplifier (continued 0.1 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...