FMB3946 Fairchild Semiconductor, FMB3946 Datasheet
FMB3946
Manufacturer Part Number
FMB3946
Description
TRANSISTOR NPN/PNP 40V SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMB3946.pdf
(3 pages)
Specifications of FMB3946
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
700mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
0.7 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMB3946
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
Symbol
Symbol
C
J
CEO
CBO
EBO
D
*
Thermal Characteristics
NPN & PNP General Purpose Amplifier
Absolute Maximum Ratings*
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
JA
This complementary device is designed for use as a general purpose
amplifier and switch The useful dynamic range extends to 100 mA as a
switch and 100 MHz as an amplifier. Sourced from Process 23 and 66.
See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Dot denotes pin #1
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Mark: .AB
SC70-6
Derate above 25 C
FFB3946
C1
B2
E2
pin #1
Characteristic
E1
Parameter
B1
C2
T
A
= 25°C unless otherwise noted
T
C1 B1 E1
C2 B2 E2
TRANSISTOR TYPE
A
= 25°C unless otherwise noted
SuperSOT -6
NPN
PNP
Dot denotes pin #1
Mark: .002
FFB3946
FMB3946
C1
300
415
2.4
E1
Max
C2
-55 to +150
pin #1
Value
200
5.0
FMB3946
40
40
B1
700
180
5.6
E2
B2
Units
mW/ C
Units
mA
mW
V
V
V
C/W
C
4
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FMB3946 Summary of contents
Page 1
... Fairchild Semiconductor Corporation FMB3946 TRANSISTOR TYPE NPN PNP SuperSOT -6 Mark: .002 Dot denotes pin # 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A FFB3946 pin #1 Value Units 5.0 V 200 mA -55 to +150 C Max Units FMB3946 300 700 mW 2.4 5.6 mW/ C 415 180 C/W 4 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...