FFB5551 Fairchild Semiconductor, FFB5551 Datasheet
FFB5551
Manufacturer Part Number
FFB5551
Description
TRANSISTOR NPN DUAL 160V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FFB5551.pdf
(5 pages)
Specifications of FFB5551
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
200mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2003 Fairchild Semiconductor Corporation
Dual-Chip NPN General Purpose Amplifier
• This device is deisgned for general purpose high voltage amplifiers.
• E1 is Pin 1.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
f
C
C
CBO
EBO
T
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
obo
Symbol
, T
Symbol
(sat)
(sat)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current gain Bandwidth Product
Output Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
C
=25°C unless otherwise noted
Parameter
T
C
=25°C unless otherwise noted
- Continuous
FFB5551
I
I
I
V
V
V
V
V
V
I
I
I
I
V
f = 100MHz
V
C
C
E
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 1.0mA, I
= 10mA, I
= 10mA, I
= 100µA, I
= 10µA, I
= 50mA, I
= 50mA, I
= 4.0V, I
= 120V, I
= 120V, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 10V, I
= 10V, I
Test Condition
C
B
B
B
B
C
E
B
C
E
C
C
C
= 0
E
E
= 1.0mA
= 1.0mA
= 5.0mA
= 5.0mA
= 10mA
= 0, f = 1.0MHz
= 0
= 0
= 0
= 1.0mA
= 10mA
= 50mA
= 0
= 0, T
A
= 100°C
C1
- 55 ~ 150
Value
B2
160
180
200
6.0
Min.
160
180
100
6.0
80
80
30
E2
Max.
0.15
0.20
250
300
1.0
1.0
6.0
50
50
50
E1
B1
SC70-6
Mark: .P1
Rev. A, June 2003
Units
mA
°C
V
V
V
Units
MHz
C2
nA
µA
nA
pF
V
V
V
V
V
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FFB5551 Summary of contents
Page 1
... Small Signal Characteristics f Current gain Bandwidth Product T C Output Capacitance obo * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Fairchild Semiconductor Corporation FFB5551 T =25°C unless otherwise noted C Parameter - Continuous T =25°C unless otherwise noted C Test Condition ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Ambient θJA ©2003 Fairchild Semiconductor Corporation T =25°C unless otherwise noted A Parameter Max. Units 200 mW 1.6 mW/°C °C/W 625 Rev. A, June 2003 ...
Page 3
... I [A], COLLECTOR CURRENT C Figure 1. DC Current Gain 10 0 Ta= Ta=- Ta=125 C 0.1 1E-3 0.01 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage ©2003 Fairchild Semiconductor Corporation 10 1 0.1 0.1 1 1E-3 Figure 2. Collector-Emitter Saturation Voltage 0.50 0.45 I =10I Ta=25 C 0.40 0.35 0.30 0.25 0.20 ...
Page 4
... Package Dimensions ©2003 Fairchild Semiconductor Corporation SC70-6 Dimensions in Millimeters Rev. A, June 2003 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...