FFB2222A Fairchild Semiconductor, FFB2222A Datasheet - Page 5

• Manufacturer Part Number: FFB2222A
• Description: TRANSISTOR NPN DUAL 40V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FFB2222A

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 0.3 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Common Emitter Characteristics
8
6
4
2
0
0
V
Common Emitter Characteristics
T
CE
A
= 25 C
= 10 V
10
o
I - COLLECTOR CURRENT (mA)
C
h
20
ie
30
1.25
1.15
1.05
0.95
0.85
0.75
1.3
1.2
1.1
0.9
0.8
1
h
h
h
Common Emitter Characteristics
40
0
oe
fe
re
5
50
V
CE
- COLLECTOR VOLTAGE (V)
10
NPN Multi-Chip General Purpose Amplifier
I = 10 mA
T
60
C
A
= 25 C
15
o
20
2.4
1.6
1.2
0.8
0.4
2
0
(f = 1.0kHz)
0
25
Common Emitter Characteristics
V
I = 10 mA
C
h
h
CE
h
re
h
oe
fe
ie
= 10 V
30
T - AMBIENT TEMPERATURE ( C)
20
A
35
40
60
h
re
o
80
(continued)
h
h
h
ie
oe
fe
100
4