BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet - Page 7

• Manufacturer Part Number: BT168GW,115
• Description: THYRISTOR 1A 600V SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BT168GW,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 630mA
• Current - On State (it (rms)) (max): 1A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 1A
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3682-2; 934042590115; BT168GW T/R

Philips Semiconductors
8. Package outline
Fig 13. Package outline SOT223 (SC-73)
9397 750 13509
Product data sheet
Plastic surface mounted package with increased heatsink; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
Rev. 04 — 12 November 2004
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
JEITA
scale
1
Thyristors; logic level for RCD/GFI/LCCB applications
2
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
0.1
y
A
L
p
Q
BT168GW
X
ISSUE DATE
99-09-13
04-11-10
v
A
M
A
SOT223
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