BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet - Page 4

• Manufacturer Part Number: BT168GW,115
• Description: THYRISTOR 1A 600V SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BT168GW,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 630mA
• Current - On State (it (rms)) (max): 1A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 1A
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3682-2; 934042590115; BT168GW T/R

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13509
Product data sheet
Symbol
R
R
Fig 4. RMS on-state current as a function of surge
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-sp)
th(j-a)
Z
I
T(RMS)
(K/W)
th(j-sp)
(A)
10
10
10
1.5
0.5
10
2
1
0
1
10
2
1
2
10
f = 50 Hz; T
duration for sinusoidal currents; maximum
values
Parameter
thermal resistance from junction to
solder point
thermal resistance from junction to
ambient
2
5
Thermal characteristics
sp
10
112 C.
1
10
4
1
surge duration (s)
10
001aab500
3
Rev. 04 — 12 November 2004
10
Conditions
see
printed-circuit board mounted,
minimum footprint
printed-circuit board mounted, pad
area as in
Figure 6
Thyristors; logic level for RCD/GFI/LCCB applications
10
Figure 15
2
Fig 5. RMS on-state current as a function of solder
I
T(RMS)
(1) T
(A)
1.2
0.8
0.4
0
point temperature; maximum values
50
sp
= 112 C.
10
1
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
Min
-
-
-
P
D
1
t
p
BT168GW
Typ
-
156
70
100
T
t
p
T
(s)
(1)
001aab498
sp
001aab506
=
( C)
Max
15
-
-
T
t
p
t
150
10
Unit
K/W
K/W
K/W
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