BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet - Page 2

• Manufacturer Part Number: BT168GW,115
• Description: THYRISTOR 1A 600V SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BT168GW,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 630mA
• Current - On State (it (rms)) (max): 1A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 1A
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3682-2; 934042590115; BT168GW T/R

Philips Semiconductors
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13509
Product data sheet
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
Fig 1. Total power dissipation as a function of average on-state current; maximum values
DRM
GM
RGM
GM
G(AV)
stg
j
t
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ s.
P
(W)
, V
tot
0.8
0.6
0.4
0.2
RRM
1
0
a = form factor = I
0
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
T(RMS)
/I
T(AV)
0.2
.
4
Rev. 04 — 12 November 2004
Conditions
half sine wave; T
see
all conduction angles;
see
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
2.8
G
t = 10 ms
t = 8.3 ms
/dt = 100 mA/ s
= 2 A; I
Figure 1
Figure 4
Thyristors; logic level for RCD/GFI/LCCB applications
0.4
G
Figure 2
= 10 mA;
and
2.2
j
sp
5
= 25 C prior to
and
112 C;
1.9
3
conduction
(degrees)
angle
120
180
30
60
90
0.6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
factor
form
1.57
[1]
2.8
2.2
1.9
a
4
a =
1.57
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
40
I
T(AV)
BT168GW
(A)
Max
600
0.63
1
8
9
0.32
50
1
5
5
2
0.1
+150
125
001aab496
0.8
110
113
116
119
122
125
T
Unit
V
A
A
A
A
A
A/ s
A
V
V
W
W
sp(max)
C
C
( C)
2
s
2 of 11