BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet - Page 6

THYRISTOR 1A 600V SOT-223

BT168GW,115

Manufacturer Part Number
BT168GW,115
Description
THYRISTOR 1A 600V SOT-223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT168GW,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
630mA
Current - On State (it (rms)) (max)
1A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Current - On State (it (rms) (max)
1A
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3682-2
934042590115
BT168GW T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
7. Package information
9397 750 13509
Product data sheet
Fig 9. On-state current characteristics
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
(1) T
(2) T
(3) T
(A)
I
T
5
4
3
2
1
0
3
2
1
0
V
R
R
junction temperature
0.4
50
j
j
j
O
S
GK
= 125 C (typical).
= 25 C (maximum).
= 125 C (maximum).
= 0.27 .
= 1.0 V.
= 1 k .
0
1.2
Epoxy meets requirements of UL94 V-0 at
50
(1)
2
100
(2)
V
T
001aab505
001aab504
T
(V)
j
( C)
(3)
Rev. 04 — 12 November 2004
150
2.8
Thyristors; logic level for RCD/GFI/LCCB applications
Fig 10. Normalized latching current as a function of
Fig 12. Critical rate of rise of off-state voltage as a
I
L(25 C)
dV
I
(V/ s)
L(Tj)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
3
2
1
0
4
3
2
R
junction temperature
function of junction temperature; typical values
1
50
0
GK
GK
8
inch.
= 1 k .
= 1 k .
0
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
(1)
(2)
100
BT168GW
100
T
j
001aab503
T
001aab507
( C)
j
( C)
150
150
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