BT168GW,115 NXP Semiconductors, BT168GW,115 Datasheet

THYRISTOR 1A 600V SOT-223

BT168GW,115

Manufacturer Part Number
BT168GW,115
Description
THYRISTOR 1A 600V SOT-223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT168GW,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
630mA
Current - On State (it (rms)) (max)
1A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A, 9A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Current - On State (it (rms) (max)
1A
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3682-2
934042590115
BT168GW T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
2. Pinning information
Table 1:
3. Ordering information
Table 2:
Pin
1
2
3
4
Type number
BT168GW
Pinning
Ordering information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Description
cathode
anode
gate
anode
Package
Name
SC-73
Passivated, sensitive gate thyristor in a SOT223 plastic package.
BT168GW
Thyristors; logic level for RCD/GFI/LCCB applications
Rev. 04 — 12 November 2004
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
For use in Residual Current Devices (RCD), Ground Fault Interrupters (GFI) and
Leakage Current Circuit Breakers (LCCB) applications where a minimum I
needed.
V
V
I
T(AV)
DRM
RRM
Description
plastic surface mounted package with increased heatsink; 4 leads
0.6 A
600 V
600 V
Simplified outline
I
I
I
SOT223
T(RMS)
TSM
GT
1
= 50 A (typical).
2
8 A
4
3
1 A
Product data sheet
Symbol
sym037
GT
Version
SOT223
limit is

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BT168GW,115 Summary of contents

Page 1

BT168GW Thyristors; logic level for RCD/GFI/LCCB applications Rev. 04 — 12 November 2004 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features Designed to be interfaced directly to microcontrollers, logic integrated circuits ...

Page 2

Philips Semiconductors 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter repetitive peak off-state voltage DRM RRM I average on-state current T(AV) I RMS on-state current T(RMS) ...

Page 3

Philips Semiconductors 10 I TSM ( Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values TSM (A) 2 ...

Page 4

Philips Semiconductors 2 I T(RMS) (A) 1 Hz; T 112 C. sp Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents; maximum values 5. Thermal ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise stated j Symbol Parameter Static characteristics I gate trigger current GT I latching current L I holding current H V on-state voltage T V gate trigger voltage ...

Page 6

Philips Semiconductors (A) ( 0 125 C (typical (maximum). j (3) T ...

Page 7

Philips Semiconductors 8. Package outline Plastic surface mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 ...

Page 8

Philips Semiconductors 9. Mounting 9.1 Mounting instructions Fig 14. SOT223: minimum footprint 9.2 Printed-circuit board Fig 15. SOT223 printed-circuit board pad area 9397 750 13509 Product data sheet Thyristors; logic level for RCD/GFI/LCCB applications 1.5 min 1.5 min (3 ) ...

Page 9

Philips Semiconductors 10. Revision history Table 6: Revision history Document ID Release date BT168GW_4 20041112 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. BT168GW_3 20010902 ...

Page 10

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 11

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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