FPNH10 Fairchild Semiconductor, FPNH10 Datasheet

FPNH10

Manufacturer Part Number

FPNH10

Description

TRANSISTOR RF NPN 25V 50MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.FPNH10.pdf (7 pages)

Specifications of FPNH10

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

25V

Frequency - Transition

650MHz

Power - Max

350mW

Dc Current Gain (hfe) (min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (ic) (max)

50mA

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Noise Figure (db Typ @ F)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FPNH10

Manufacturer:

FSC

Quantity:

1 950

Company:

Meier Automation Equipment Co., Limited

Part Number:

FPNH10

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 7
Download datasheet (88Kb)

Symbol

CEO

CBO

EBO

, T

NPN RF Transistor

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

This device is designed for use in low noise UHF/VHF amplifiers,

with collector currents in the 100 µA to 20 mA range in common

emitter or common base mode of operations, and in low frequency

drift, high output UHF oscillators. Sourced from Process 42.

Absolute Maximum Ratings*

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

θJC

θJA

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Derate above 25°C

FPNH10

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

FPNH10

Max

350

125

357

2.8

-55 to +150

Value

3.0

Units

mW/°C

Units

°C/W

°C

FPNH10 Rev. A

Related parts for FPNH10

FPNH10 Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2000 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 3 °C -55 to +150 Max Units FPNH10 350 mW 2.8 mW/°C °C/W 125 °C/W 357 FPNH10 Rev. A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 100 Vce = 5V 80 125 ° ° °C 0 0.1 0.2 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage ...

Page 4

Common Base Y Parameters vs. Frequency Input Admittance 120 10V - -80 -120 100 200 500 f - FREQUENCY (MHz Forward Transfer ...

Page 5

Common Emitter Y Parameters vs. Frequency Input Admittance 10V 100 200 500 f - FREQUENCY (MHz) Forward Transfer Admittance ...

Page 6

Test Circuits 2.0 KΩ Ω Ω Ω Ω T1 1000 pF L1 Input 50 Ω Ω Ω Ω Ω 1000 FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) RFC 1000 pF 2.2 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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