NE85639-A CEL, NE85639-A Datasheet - Page 3

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
in
2. Maximum T
SYMBOLS
V
V
V
T
CBO
CEO
EBO
T
STG
I
C
J
300
100
400
200
5.0
0.5
3.0
2.0
1.0
0.7
0.3
0.2
0.1
0
permanent damage.
0
1
Collector to Emitter Voltage
J
Collector to Base Voltage
TOTAL POWER DISSIPATION vs.
NE85633
Collector to Base Voltage, V
Emitter to Base Voltage
for the NE85600 and NE85635 is 200°C.
CAPACITANCE vs. COLLECTOR
Junction Temperature
Storage Temperature
Ambient Temperature, T
Collector Current
AMBIENT TEMPERATURE
PARAMETERS
2
NE85633 AND NE85635
COLLECTOR TO BASE
50
TO BASE VOLTAGE
3
NE85635
5
100
7
10
NE85635
NE85634
150
A
20
1
UNITS
CB
(°C)
NE85632/
(T
mA
°C
°C
V
V
V
(V)
A
30
(T
33
= 25°C)
A
200
= 25°C)
50
-65 to +150
RATINGS
150
100
3.0
20
12
2
500
300
200
100
2.4
2.0
1.6
1.2
0.8
50
10
0.4
70
30
20
0
1
0
3.8
NE85632
Free Air
NE85634
Free Air
Aluminum
Heat Sink
for NE85632
V
CE
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ambient Temperature, T
= 10 V
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
2
NE85632 AND NE85634
Collector Current, I
3
7.8
10
50
NE85632
with Heat
5
NE85634
Ceramic Substrate
2.5 cm X 0.7 mm
R
TH (J-A)
Sink
7
2
10
= 62.5˚C/W
100
C
NE856 SERIES
(mA)
A
20
(°C)
30
150
50