NE85639-A CEL, NE85639-A Datasheet - Page 2

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed.
3. C
4. With 2.5 cm
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
ELECTRICAL CHARACTERISTICS
R
SYMBOLS
|S
TH (J-A)
I
I
R
guard circuit. The emitter terminal shall be connected to the guard terminal.
h
NF
CBO
EBO
C
|S
G
21E
P
f
FE
TH (J-A)
re
I
I
T
re
T
h
A
NF
G
CBO
EBO
C
21E
P
f
FE
T
measurement employs a three terminal capacitance bridge incorporating a
|
re
A
T
2
|
2
Gain Bandwidth Product at
V
V
Noise Figure at
V
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
V
Total Power Dissipation
Thermal Resistance (J-A)
CE
CE
CE
CE
CE
CE
CE
CE
CB
CB
2
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
Noise Figure at
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
Total Power Dissipation
Thermal Resistance (J to A)
EIAJ
x 0.7 mm ceramic substrate (infinite heatsink).
EIAJ
CB
EB
CE
CE
CE
CE
CE
CB
= 10 V, I
= 3 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 10 V, I
CB
EB
= 1 V, I
= 15 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
1
PACKAGE OUTLINE
1
PACKAGE OUTLINE
REGISTERED NUMBER
= 15 V, I
= 1 V, I
REGISTERED NUMBER
PART NUMBER
PART NUMBER
C
C
E
C
C
C
C
C
C
E
= 7 mA
= 7 mA
= 0 mA, f = 1 MHz
C
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 2 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
C
C
C
C
C
E
= 0 mA
C
= 0 mA
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
= 0 mA
= 0
2
f = 2 GHz
3
at
2
at
f = 2 GHz
3
at
f = 2 GHz
f = 2 GHz
mA
at
f = 2 GHz
(T
(T
A
A
= 25°C)
= 25°C)
°C/W
GHz
GHz
mW
dB
dB
dB
dB
dB
dB
μA
μA
pF
pF
UNITS
°C/W
GHz
mW
dB
dB
dB
dB
dB
dB
μA
μA
pF
50 120 300
7
00 (CHIP)
NE85600
7.0
1.1
2.1
0.5
10
9
MIN
50
700
NE85633
2SC3356
1.0
1.0
1.0
TYP MAX MIN
11.5
0.55
120
7.0
1.4
33
9
11
50
NE85618
2SC5011
300
200
625
2.0
1.0
1.0
1.0
120 300
6.5
1.4
2.1
0.5
18
13
13
7
7
50
150
833
1.0
1.0
0.9
NE85634
2SC3357
TYP MAX MIN TYP MAX MIN
0.65
120
6.5
1.4
9.5
34
3.0
80
NE85619
2SC5006
2000
62.5
12.5
120 160
300
4.5
1.4
2.2
6.5
0.7
1.0
1.0
1.0
19
12
4
4
1000
100
1.0
1.0
1.5
50
7
NE85635
2SC3603
40
120
7.0
2.1
0.5
35
10
9
NE85630
2SC4226
110 250
4.5
1.3
2.2
0.7
30
12
12
6
6
300
580
590
3.4
1.0
1.0
1.0
NE856 SERIES
150
833
1.0
1.0
1.5
50
NE85639/39R
50
2SC4093
NE85632
2SC3355
TYP MAX
13.5
120
9.0
1.5
8.5
0.5
39
13
0.65 1.0
7
120 300
6.5
1.4
9.5
32
10
300
200
500
2.1
1.0
1.0
0.9
600
210
1.0
1.0