NE85639-A CEL, NE85639-A Datasheet - Page 19

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE85633 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Base
L
1.56e-18
15e-12
BX
0.55
0.75
1e-9
1.11
1.49
0.3
0.5
Q1
0.2
10
0
0
6
0
0
3
(1)
C
L
BEPKG
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
C
Q1
CEPKG
L
CX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
Collector
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 8.0 GHz
V
7/97
CE
= 1 V to 10 V, I
NE856 SERIES
NE85633
0.09e-12
0.16e-12
0.85e-9
1e-9
0.15e-12
0.15e-12
0.07e-12
0.3e-9
0.4e-9
0.3e-9
C
seconds
farads
henries
ohms
volts
amps
Units
= 1 mA to 20 mA