NE85639-A CEL, NE85639-A Datasheet - Page 22

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

1. Collector
2. Emitter
3. Base
4. Emitter
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
2.0 ± 0.2
1.6 ± 0.1
0.75 ± 0.05
0.9 ± 0.1
1.0
(Chip Thickness: 140 to 160 μm)
0.65
0.60
0.5
BASE
0.6
0.4
0.3
0.2
PACKAGE OUTLINE 18
+0.10
PACKAGE OUTLINE 19
-0.05
+0.1
2
-
1
0
NE85600 (CHIP)
0.35
0.30
0.22
2
1
(SOT-343)
1.6 ± 0.1
0.8 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
(Units in mm)
0 to 0.1
EMITTER
0.07φ
0 to 0.1
3
3
4
0.65
0.65
0.15
0.3
0.3
(LEADS 2, 3, 4)
LEAD 3 ONLY
+0.10
0.15
+0.10
-0.05
-0.05
+0.1
-0.05
1.3
.112
+0.10
-0.05
0.35
0.6
1.25
1
2
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
0.6
PACKAGE OUTLINE 19
PACKAGE OUTLINE 18
1.3
1.7
0.8
NE856 SERIES
3
3
4
0.5
0.6
1.0