NE85639-A CEL, NE85639-A Datasheet - Page 20

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

NE85635 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
BASE
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
CBEX_PKG
RB_PKG
0.1 ohms
0.1pF
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
Q1
0.2
10
LB_PKG
0.15nH
0
0
6
0
0
3
0
1
(1)
0.05pF
CBE_PKG
0.77nH
LB
0.09pF
CCB
CCB_PKG
0.05pF
68100
RE_PKG
0.1 ohms
LE_PKG
0.23nH
EMITTER
CCE
0.16pF
0.45nH
LC
Q1
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
0.15nH
LC_PKG
CCE_PKG
0.2pF
CCEX_PKG
Parameter
time
capacitance
inductance
resistance
voltage
current
0.2pF
0.1 ohms
RC_PKG
0.05 to 5.0 GHz
V
11/1/96
CE
= 10 V, I
COLLECTOR
NE856 SERIES
NE856 SERIES
C
= 7 mA to 30 mA
seconds
farads
henries
ohms
volts
amps
Units