NE85639-A CEL, NE85639-A Datasheet - Page 16

• Manufacturer Part Number: NE85639-A
• Description: TRANSISTOR NPN 1GHZ SOT-143
• Manufacturer: CEL

Specifications of NE85639-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE85639-T1-A

NE85618 NONLINEAR MODEL
SCHEMATIC
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
MJE
CJC
VAF
CJE
VJE
VAR
IKR
ISC
IRB
VJC
NR
NC
RC
BF
NF
IKF
ISE
RB
NE
BR
RE
IS
3.2e-15
1.96e-4
2.8e-12
1.1e-12
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
EG
FC
TF
ITF
XTI
KF
TR
AF
Base
L
BX
(1)
10e-12
0.55
1e-9
0.75
1.11
0.3
0.5
0.2
Q1
10
0
0
6
0
0
3
0
1
C
L
BEPKG
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
C
CE
L
C
Parameter
time
capacitance
inductance
resistance
voltage
current
C
Parameters
C
C
L
L
L
C
C
C
L
L
L
L
B
C
E
BX
CX
EX
0.05 to 5.0 GHz
V
6/7/96
CEPKG
CB
CE
CBPKG
CEPKG
BEPKG
Q1
CX
CE
= 2.5 V to 10 V, I
Collector
C
= 3 mA to 10 mA
0.087e-12
0.16e-12
1.29e-9
1.04e-9
0.62e-9
0.054e-12
0.044e-12
0.33e-12
0.18e-9
0.41e-9
0.09e-9
NE85618
seconds
farads
henries
ohms
volts
amps
NE856 SERIES
Units