NE662M16-A CEL, NE662M16-A Datasheet - Page 9

• Manufacturer Part Number: NE662M16-A
• Description: TRANSISTOR NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NE662M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 3.3 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.115 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
NE662M16 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
RBM
VAR
CJE
MJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
1.6e-16
0.4e-12
0.1e-12
1.3e-3
3e-15
1.02
0.38
1e-6
1.02
8.75
0.75
105
1.28
Q1
2.5
0.1
1.1
3.5
0.6
0.5
23
30
12
6
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
Base
TF
KF
AF
C
BEPKG
L
BX
2e-12
1e-11
0.75
0.03
1.11
Q1
0.3
0.1
0.6
0.2
0.2
0
0
0
0
3
0
1
L
B
C
CB
(1)
Emitter
L
L
E
EX
C
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
CE
Parameters
C
C
L
L
C
C
L
L
L
L
C
B
E
BX
CX
EX
CB
CE
CEPKG
BEPK
CX
CEPKG
0.1 to 4 GHz
V
01/15/2002
CE
= 0.5 V to 3 V, I
Collector
NE662M16
0.07e-12
0.09e-12
0.4e-9
0.14e-9
0.12e-12
0.1e-12
0.1e-9
0.6e-9
0.04e-9
C
= 1 mA to 30 mA
Internet: http://WWW.CEL.COM
01/22/2002