NE662M16-A CEL, NE662M16-A Datasheet - Page 2

• Manufacturer Part Number: NE662M16-A
• Description: TRANSISTOR NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NE662M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 3.3 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.115 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE662M16
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
ORDERING INFORMATION
SYMBOLS
PART NUMBER
NE662M16-T3-A
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PARAMETERS
10 kpcs/reel
QUANTITY
Pin 1 (Collector), Pin 6 (Emitter)
face the perforation side on the
tape.
PACKAGING
UNITS
mW
mA
°C
°C
V
V
V
1
(T
-65 to +150
RATINGS
A
= 25°C)
115
150
3.3
1.5
15
35
OUTLINE DIMENSIONS
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
PACKAGE OUTLINE M16
1.0±0.05
0.8
+0.07
-0.05
(Units in mm)
4. Base
5. Emitter
6. Emitter