NE662M16-A CEL, NE662M16-A Datasheet - Page 5

• Manufacturer Part Number: NE662M16-A
• Description: TRANSISTOR NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NE662M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 3.3 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.115 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
6
5
4
3
2
1
0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1
1
1
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
V
f = 1.5 GHz
NOISE FIGURE, ASSOCIATED GAIN
V
f = 2 GHz
V
f = 1 GHz
CE
CE
CE
= 1 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 1 V
= 1 V
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
NF
NF
G
NF
G
G
a
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
(T
30
25
20
15
10
5
0
30
25
20
15
10
5
0
30
25
20
15
10
5
0
A
= 25°C)
6
5
4
3
2
1
0
1
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1
1
V
f = 1 GHz
NOISE FIGURE, ASSOCIATED GAIN
V
f = 1.5 GHz
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
V
f = 2 GHz
CE
CE
= 2 V
= 2 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 2 V
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
NF
G
a
G
NF
G
NF
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
30
25
20
15
10
5
0
30
25
20
15
10
5
0
30
25
20
15
10
5
0