NE662M16-A CEL, NE662M16-A Datasheet - Page 3

• Manufacturer Part Number: NE662M16-A
• Description: TRANSISTOR NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NE662M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 3.3 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.115 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
1 000
300
250
200
150
115
100
100
50
35
30
25
20
15
10
10
0
5
0
0.1
V
TOTAL POWER DISSIPATION vs.
BASE TO EMITTER VOLTAGE
CE
Base to Emitter Voltage, V
COLLECTOR CURRENT vs.
Ambient Temperature, T
25
= 2 V
AMBIENT TEMPERATURE
0.2
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
Mounted on Glass Epoxy Board
(1.08 cm
50
1
0.4
75
2
× 1.0 mm (t) )
0.6
100
10
C
(mA)
A
BE
(°C)
0.8
V
125
CE
(V)
= 2 V
150
100
1.0
(T
A
= 25°C)
0.20
0.16
0.12
0.08
0.04
40
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
1
REVERSE TRANSFER CAPACITANCE
V
f = 2 GHz
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
CE
Collector to Emitter Voltage, V
Collector to Base Voltage, V
= 2 V
COLLECTOR CURRENT vs.
Collector Current, I
2
COLLECTOR CURRENT
GAIN BANDWIDTH vs.
1
4
10
2
6
500 A
C
(mA)
µ
3
f = 1 MHz
I
CB
B
8
450
400
350
300
250
200
150
100
CE
= 50
(V)
(V)
NE662M16
µ
µ
µ
µ
µ
µ
µ
µ
A
A
A
A
A
A
A
A
µ
A
100
10
4