NE662M16-A CEL, NE662M16-A Datasheet

NE662M16-A

Manufacturer Part Number

NE662M16-A

Description

TRANSISTOR NPN 2GHZ M16

Manufacturer

CEL

Datasheet

1.NE662M16-T3-A.pdf (10 pages)

Specifications of NE662M16-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

3.3V

Frequency - Transition

25GHz

Noise Figure (db Typ @ F)

1.1dB ~ 1.5dB @ 2GHz

Gain

20dB

Power - Max

115mW

Dc Current Gain (hfe) (min) @ Ic, Vce

50 @ 5mA, 2V

Current - Collector (ic) (max)

35mA

Mounting Type

Surface Mount

Package / Case

M04

Dc Collector/base Gain Hfe Min

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Maximum Operating Frequency

25 GHz

Collector- Emitter Voltage Vceo Max

3.3 V

Emitter- Base Voltage Vebo

1.5 V

Continuous Collector Current

0.035 A

Power Dissipation

0.115 W

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NE662M16-A

Manufacturer:

CEL

Quantity:

135

Current page: 1 of 10
Download datasheet (176Kb)

• HIGH GAIN BANDWIDTH: f

• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

• NEW LOW PROFILE M16 PACKAGE:

FEATURES

DESCRIPTION

NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz f

wafer process. With a typical transition frequency of 25 GHz

the NE662M16 is usable in applications from 100 MHz to over

10 GHz. The NE662M16 provides excellent low voltage/low

current performance.

NEC's new low profile/flat lead style "M16" package is ideal for

today's portable wireless applications. The NE662M16 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS

Notes:

• Flat Lead Style with a height of just 0.50mm

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MSG = S

SYMBOLS

MSG

Cre

CBO

EBO

21E

1dB

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain

Gain Bandwidth at V

Maximum Stable Gain

Insertion Power Gain at V

Noise Figure at V

Output Power at 1 dB compression point at

Third Order Intercept Point at V

Feedback Capacitance

= 2 V, I

= 25 GHz

= 20 mA, f = 2 GHz

PARAMETERS AND CONDITIONS

EIAJ

FREQUENCY TRANSISTOR

= 2 V, I

PACKAGE OUTLINE

at V

= 3 V, I

REGISTERED NUMBER

at V

PART NUMBER

at V

= 2 V, I

= 5 mA, f = 2 GHz, Z

= 1 V, I

= 2 V, I

= 5V, I

= 2 V, I

= 30 mA, f = 2 GHz

= 25°C)

= 2 V, I

= 20 mA, f = 2 GHz

= 0

NPN SILICON HIGH

= 5 mA

= 0

= 20 mA, f = 2 GHz

= 0, f = 1 MHz

= 20 mA, f = 2 GHz

= Z

M16

OPT

UNITS

GHz

dBm

MIN

NE662M16

2SC5704

M16

TYP

0.14

1.1

MAX

0.24

200

100

1.5

Related parts for NE662M16-A

NE662M16-A Summary of contents

Page 1

... DESCRIPTION NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz f wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications ...

Page 2

... T T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION PART NUMBER QUANTITY NE662M16-T3-A 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side on the tape. 1 OUTLINE DIMENSIONS (T = 25°C) A UNITS RATINGS V ...

Page 3

... Base to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current 25°C) A 125 150 (°C) A 0.8 1.0 ( 100 (mA) NE662M16 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0. MHz 0.16 0.12 0.08 0. Collector to Base Voltage, V (V) CB COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 500 A µ 450 µ 30 ...

Page 4

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG GHz ...

Page 5

TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S21 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.79 -8.34 0.200 0.79 -20.52 0.300 0.78 -30.77 0.400 0.76 -39.87 0.500 0.74 -48.66 0.600 0.73 -56.79 0.700 0.71 -64.12 0.800 0.69 -71 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S11 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.66 -12.81 0.200 0.66 -28.48 0.300 0.65 -41.93 0.400 0.63 -53.87 0.500 0.61 -64.70 0.600 0.60 -74.41 0.700 0.58 -82.86 0.800 0.57 -90 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 25 50 100 0 10 S11 S22 -j10 -j25 -j50 NE662M16 FREQUENCY S 11 GHz MAG ANG 0.100 0.51 -19.24 0.200 0.51 -39.58 0.300 0.51 -56.67 0.400 0.51 -71.47 0.500 0.50 -83.85 0.600 0.50 -94.44 0.700 0.49 -103.20 ...

Page 9

... NE662M16 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 1.6e-16 MJC BF 105 XCJC NF 1.02 CJS VAF 23 VJS IKF 0.38 MJS ISE 1e XTF NR 1.02 VTF VAR 2.5 ITF IKR 0.1 PTF ISC 3e- 1. 1.1 XTB RB 6 XTI RBM 3.5 KF IRB 1 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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