NE662M16-A CEL, NE662M16-A Datasheet - Page 4

• Manufacturer Part Number: NE662M16-A
• Description: TRANSISTOR NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NE662M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 3.3 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.115 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
-10
30
25
20
15
10
35
30
25
20
15
10
30
20
10
5
0
5
0
0
0.1
-25
1
INSERTION POWER GAIN, MAG, MSG
V
f = 1 GHz
V
I
cq
CE
CE
= 20 mA (RF OFF)
OUTPUT POWER, COLLECTOR
= 2 V
= 2 V, f = 1 GHz
CURRENT vs. INPUT POWER
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
Collector Current, I
Input Power, P
Frequency, f (GHz)
-15
vs. FREQUENCY
P
out
10
1
|S
MSG
21e
I
in
|
C
2
5
(dBm)
C
(mA)
V
I
C
CE
= 20 mA
= 1 V
10
100
5
50
40
30
20
10
(T
A
= 25°C)
-10
35
30
25
20
15
10
30
20
10
30
25
20
15
10
5
0
0
5
0
0.1
-25
1
V
I
V
f = 2 GHz
cq
CE
CE
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
= 20 mA (RF OFF)
OUTPUT POWER, COLLECTOR
= 2 V, f = 2 GHz
= 2 V
CURRENT vs. INPUT POWER
INSERTION POWER GAIN
Collector Current, I
Input Power, P
Frequency, f (GHz)
vs. FREQUENCY
-15
P
out
MSG
10
1
|S
21e
in
|
I
2
C
(dBm)
5
C
MAG
(mA)
V
I
C
CE
= 20 mA
= 2 V
100
10
5
50
40
30
20
10