MMBTH11 Fairchild Semiconductor, MMBTH11 Datasheet - Page 5

• Manufacturer Part Number: MMBTH11
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -

Common Emitter Y Parameters
0.28
0.24
0.16
0.12
0.08
0.04
140
120
100
0.36
0.32
0.28
0.24
0.16
0.12
0.08
0.04
0.2
80
60
40
20
0.4
0.2
0
0
0
0
0
0
Reverse Transfer Admittance
Forward Transfer Admittance
Reverse Transfer Admittance
I = 7.0 mA
f = 45 MHz
V
f = 45 MHz
I = 7.0 mA
f = 45 MHz
C
C
CE
2
= 15V
vs Collector Current
vs Collector Voltage
vs Collector Voltage
I - COLLECTOR CURRENT (mA)
V
V
C
4
4
4
CE
CE
- COLLECTOR VOLTAGE (V)
- COLLECTOR VOLTAGE (V)
6
8
8
8
-b
-g
-b
-g
10
re
re
re
re
-b
g
fe
fe
12
12
12
14
16
16
16
18
20
20
(continued)
20
140
120
100
1.4
1.2
0.8
0.6
0.4
0.2
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
1
0
0
0
50
50
0
V
I = 7.0 mA
Forward Transfer Admittance
Reverse Transfer Admittance
V
I = 7.0 mA
V
f = 200 MHz
C
Reverse Transfer Admittance
C
CE
CE
CE
= 15V
= 10V
= 15V
vs Collector Current
I - COLLECTOR CURRENT (mA)
100
2
C
100
vs Frequency
vs Frequency
f - FREQUENCY (MHz)
f - FREQUENCY (MHz)
4
200
200
NPN RF Transistor
-b
-g
-b
-g
g
re
re
re
re
fe
6
-b
fe
500
500
MPSH11/MMBTH11, Rev. B
8
(continued)
1000
1000
10