BFG310W/XR,115 NXP Semiconductors, BFG310W/XR,115 Datasheet - Page 6

• Manufacturer Part Number: BFG310W/XR,115
• Description: TRANS NPN 6V 10MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 2GHz
• Gain: 18dB
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14 GHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1976-2; 934057941115; BFG310W/XR T/R

Philips Semiconductors
9397 750 14245
Product data sheet
Fig 7. Common emitter reverse transmission coefficient (s
Fig 8. Common emitter output reflection coefficient (s
V
V
CE
CE
= 3 V; I
= 3 V; I
180
180
C
C
= 5 mA.
= 5 mA; Z
0.5
0
Rev. 01 — 2 February 2005
135
135
135
135
0.4
0.2
0.2
o
0.2
= 50 .
0.3
0.5
0.5
0.2
0.5
0.1
40 MHz
0
90
90
90
90
1
1
1
3 GHz
3 GHz
2
NPN 14 GHz wideband transistor
22
); typical values
2
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
12
5
BFG310W/XR
); typical values
40 MHz
45
45
45
45
10
001aac184
001aac183
5
5
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
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