BFG310W/XR T/R NXP Semiconductors, BFG310W/XR T/R Datasheet

RF Bipolar Small Signal TAPE-7 TNS-RFSS

BFG310W/XR T/R

Manufacturer Part Number
BFG310W/XR T/R
Description
RF Bipolar Small Signal TAPE-7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BFG310WXR115.pdf (12 pages)

Specifications of BFG310W/XR T/R

Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
14000 MHz
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.01 A
Power Dissipation
60 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG310W/XR,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
C
T
FE
CBO
CEO
tot
CBS
BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
Quick reference data
Conditions
open emitter
open base
T
I
T
V
emitter grounded
I
f = 1 GHz; T
C
C
sp
j
CB
= 25 C
= 5 mA; V
= 5 mA; V
= 5 V; f = 1 MHz;
145 C
amb
CE
CE
= 3 V;
= 3 V;
= 25 C
Product data sheet
[1]
Min
-
-
-
-
60
-
-
Typ
-
-
-
-
100
0.17
14
Max
15
6
10
60
200
0.3
-
Unit
V
V
mA
mW
pF
GHz

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BFG310W/XR T/R Summary of contents

Page 1

BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features High power gain Low noise figure High transition ...

Page 2

Philips Semiconductors Table 1: Symbol Parameter MSG [ Pinning information Table 2: Pin Ordering information Table 3: Type number BFG310W/XR 4. Marking Table 4: Type number BFG310W/XR [1] ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total ...

Page 4

Philips Semiconductors 70 P tot (mW 100 Fig 1. Power derating curve 0.20 C CBS (pF) 0.19 0.18 0.17 0. ...

Page 5

Philips Semiconductors Fig 5. Common emitter input reflection coefficient (s Fig 6. Common emitter forward transmission coefficient (s 9397 750 14245 Product data sheet 135 0.5 0.2 0 0.2 0.5 180 3 GHz 0.2 0.5 135 ...

Page 6

Philips Semiconductors Fig 7. Common emitter reverse transmission coefficient (s Fig 8. Common emitter output reflection coefficient (s 9397 750 14245 Product data sheet 135 0.5 0.4 0.3 0.2 0.1 180 135 mA. ...

Page 7

Philips Semiconductors 8. Application information Table 8: Sequence ...

Page 8

Philips Semiconductors Fig 9. Package equivalent circuit of SOT343R Table 9: Designation C_base_pad C_emitter_pad L C_wire L B_wire L E_wire L C_lead L B_lead L E_lead 9397 750 14245 Product data sheet C CB ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT b p max 0.4 0.7 1.1 mm 0.1 0.8 ...

Page 10

Philips Semiconductors 10. Revision history Table 10: Revision history Document ID Release date BFG310W_XR_1 20050202 9397 750 14245 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 2 February 2005 BFG310W/XR NPN 14 GHz ...

Page 11

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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