BFG310W/XR,115 NXP Semiconductors, BFG310W/XR,115 Datasheet - Page 2

TRANS NPN 6V 10MA 14GHZ SOT343R

BFG310W/XR,115

Manufacturer Part Number
BFG310W/XR,115
Description
TRANS NPN 6V 10MA 14GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG310W/XR,115

Package / Case
CMPAK-4
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1dB @ 2GHz
Gain
18dB
Power - Max
60mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 3V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 5mA @ 3V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
14 GHz
Collector- Emitter Voltage Vceo Max
6 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
10 mA
Power Dissipation
60 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1976-2
934057941115
BFG310W/XR T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFG310W/XR,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 14245
Product data sheet
Table 1:
[1]
Table 2:
Table 3:
Table 4:
[1]
Symbol Parameter
MSG
NF
Pin
1
2
3
4
Type number
BFG310W/XR
Type number
BFG310W/XR
s
21
2
T
* = p: made in Hong Kong.
sp
is the temperature at the soldering point of the collector pin.
maximum stable gain
insertion power gain
noise figure
Quick reference data
Pinning
Ordering information
Marking codes
Description
collector
emitter
base
emitter
Package
Name
-
Rev. 01 — 2 February 2005
Description
plastic surface mounted package; reverse pinning;
4 leads
…continued
Conditions
I
f = 1.8 GHz; T
I
f = 1.8 GHz; T
Z
V
C
C
S
s
CE
= 5 mA; V
= 5 mA; V
=
= Z
= 3 V; f = 2 GHz
opt
L
= 50
; I
C
= 1 mA;
CE
CE
Marking code
A7*
amb
amb
= 3 V;
= 3 V;
Simplified outline
= 25 C
= 25 C;
NPN 14 GHz wideband transistor
3
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
BFG310W/XR
1
4
Min
-
-
-
Typ
18
14
1
Symbol
3
Max
-
-
-
sym086
Version
SOT343R
2, 4
1
Unit
dB
dB
dB
2 of 12

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