BFG310W/XR,115 NXP Semiconductors, BFG310W/XR,115 Datasheet - Page 4

• Manufacturer Part Number: BFG310W/XR,115
• Description: TRANS NPN 6V 10MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 2GHz
• Gain: 18dB
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14 GHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1976-2; 934057941115; BFG310W/XR T/R

Philips Semiconductors
9397 750 14245
Product data sheet
Fig 1. Power derating curve
Fig 3. Collector-base capacitance as a function of
(mW)
C
P
(pF)
CBS
tot
0.20
0.19
0.18
0.17
0.16
0.15
70
60
50
40
30
20
10
0
I
collector-base voltage; typical values
C
0
0
= 0 mA; f = 1 MHz.
1
50
2
100
3
150
4
T
001aac177
001aac179
sp
V
CB
( C)
(V)
Rev. 01 — 2 February 2005
200
5
Fig 2. Collector current as a function of
Fig 4. Gain as a function of frequency; typical values
(mA)
(dB)
I
G
C
10
40
30
20
10
8
6
4
2
0
0
collector-emitter voltage; typical values
I
10
C
0
= 5 mA; V
1
CE
10
NPN 14 GHz wideband transistor
= 3 V.
2
2
MSG
s
21
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
BFG310W/XR
3
I
B
= 120 A
100 A
80 A
60 A
40 A
20 A
10
4
3
V
f (MHz)
CE
001aac178
001aac180
5
(V)
10
6
4
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