BFG310W/XR,115 NXP Semiconductors, BFG310W/XR,115 Datasheet - Page 3

• Manufacturer Part Number: BFG310W/XR,115
• Description: TRANS NPN 6V 10MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 2GHz
• Gain: 18dB
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14 GHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1976-2; 934057941115; BFG310W/XR T/R

Philips Semiconductors
5. Limiting values
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
6. Thermal characteristics
Table 6:
[1]
7. Characteristics
Table 7:
T
9397 750 14245
Product data sheet
Symbol
V
V
V
I
P
T
T
Symbol Parameter
R
Symbol Parameter
I
h
C
C
C
f
MSG
NF
P
IP3
s
C
CBO
T
j
FE
stg
j
CBO
CEO
EBO
tot
L(1dB)
th(j-sp)
CBS
CES
EBS
21
= 25 C; unless otherwise specified.
2
T
T
sp
sp
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
thermal resistance from junction to solder point
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum stable gain
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
I
I
V
V
V
I
T
I
T
I
Z
I
T
I
T
E
C
C
C
C
C
C
amb
amb
S
s
amb
amb
CB
CE
EB
f = 1.8 GHz
f = 3 GHz
= 0 A; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
= Z
= 5 V; f = 1 MHz; emitter grounded
= 5 V; f = 1 MHz; base grounded
= 0.5 V; f = 1 MHz; collector grounded
Rev. 01 — 2 February 2005
= 25 C
= 25 C
= 25 C; Z
= 25 C; Z
opt
L
= 50
; I
C
CB
Conditions
open emitter
open base
open collector
T
= 1 mA; V
CE
CE
CE
CE
CE
CE
sp
= 6 V
= 3 V
= 3 V; f = 1 GHz;
= 3 V; f = 1.8 GHz;
= 3 V; T
= 3 V; f = 1.8 GHz;
= 3 V; f = 1.8 GHz;
S
S
145 C
= Z
= Z
L
L
CE
= 50
= 50
Conditions
T
amb
sp
= 3 V; f = 2 GHz
= 25 C;
145 C
NPN 14 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
BFG310W/XR
Min
-
60
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
65
Typ
-
100
0.17
0.22
0.16
14
18
14
11
1
1.8
8.5
[1]
Max
15
6
2
10
60
+175
175
Typ
530
Max
15
200
0.3
-
-
-
-
-
-
-
-
-
Unit
V
V
V
mA
mW
C
C
Unit
K/W
3 of 12
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dBm
dBm