2N5770 Fairchild Semiconductor, 2N5770 Datasheet - Page 2

• Manufacturer Part Number: 2N5770
• Description: IC TRANS NPN SS RF 50MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5770

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 8mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
I
I
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
NF
C
C
h
rb’C
G
P
h
V
V
FUNCTIONAL TEST
CBO
EBO
Symbol
*
(BR)CEO
(BR)CBO
(BR)EBO
FE
fe
O
CE(
BE(
cb
ib
pe
Pulse Test: Pulse Width
Electrical Characteristics
sat
C
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Noise Figure
Collector-Base Capacitance
Input Capacitance
Small-Signal Current Gain
Collector-Base Time Constant
Amplifier Power Gain
Power Output
Collector Efficiency
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
300 s, Duty Cycle 2.0%
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
V
I
f = 200 MHz
V
f = 500 MHz
I
f = 60 MHz, Rg = 400
V
V
I
f = 100 MHz
I
f = 1.0 kHz
I
f = 79.8 MHz
V
V
I
I
C
C
E
C
C
C
E
C
C
C
CB
CB
EB
EB
CB
EB
CC
CE
CE
= 3.0 mA, I
= 1.0 A, I
= 10 A, I
= 1.0 mA, V
= 8.0 mA, V
= 8.0 mA, V
= 8.0 mA, V
= 6.0 mA, V
= 10 mA, I
= 10 mA, I
= 15 V, I
= 15 V, I
= 3.0 V, I
= 2.0 V, I
= 10 V, I
= 0.5 V
= 15 V, I
= 1.0 V, I
= 10 V, I
Test Conditions
C
E
E
E
E
C
C
B
B
C
C
B
C
= 0
= 0
= 0, T
CB
CB
= 0
CE
= 0, f = 1.0 MHz
CE
CE
= 8.0 mA,
= 8.0 mA
= 1.0 mA
= 1.0 mA
= 0
= 0
= 0
= 3.0 mA
= 10 V,
= 12 V,
= 8.0 V,
= 10 V,
= 10 V,
A
= 150 C
Min
NPN RF Transistor
4.5
0.7
9.0
3.0
15
30
15
30
25
40
20
50
Max
240
1.0
1.0
200
6.0
1.1
2.0
0.4
1.0
10
10
18
20
(continued)
Units
mW
nA
dB
dB
pF
pF
pS
V
V
V
V
V
A
A
A