BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet - Page 6

• Manufacturer Part Number: BG 3123R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 3123R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5V@Amp A/30@5V@Amp BdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BG3123RE6327XT; SP000015126

Gate 1 forward transconductance
g
amp. A
Drain current I
V
amp. A
fs
DS
=
mS
mA
= 5V, V
32
24
20
16
12
28
20
16
12
8
4
0
8
4
0
0
0
(I
D
0.2 0.4 0.6 0.8
), V
G2S
DS
4
D
= 5V, V
= Parameter
=
8
(V
G1S
G2S
1
2V
1.2 1.4 1.6
)
12
= Parameter
2.5V
mA
3V
I
V
D
V
G1S
4V
3V
2V
1.5V
4V
20
2
6
Gate 1 forward transconductance
g
amp. B
Drain current I
V
amp. B
fs
DS
=
mS
mA
= 5V, V
25
15
10
16
12
10
5
0
8
6
4
2
0
0
0
(I
D
0.2 0.4 0.6 0.8
), V
G2S
DS
4
D
= 5V, V
= Parameter
=
(V
G1S
G2S
8
1
2V
1.2 1.4 1.6
)
= Parameter
BG3123...
mA
2006-06-21
2.5V
3V
4V
3V
2V
1.5V
I
V
4V
D
V
G1S
16
2