BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BG 3123R E6327
Manufacturer Part Number
BG 3123R E6327
Description
MOSFET N-CH DUAL 8V SOT-363R
Manufacturer
Infineon Technologies
Specifications of BG 3123R E6327
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
25dB
Voltage - Rated
8V
Current Rating
25mA, 20mA
Noise Figure
1.8dB
Current - Test
14mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BG3123RE6327XT
SP000015126
SP000015126
1 For calculation of R
Thermal Resistance
Parameter
Channel - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
amp. A
V
amp. B
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
D
G1S
G2S
DS
DS
DS
DS
DS
G1S
G2S
= 10 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G2S
G1S
G2S
G1S
= 20 µA
thJA
= 0 V, V
= 4 V, R
= 4 V, R
= 4 V, I
= 0 V, V
G2S
G1S
= 0 V
= 0 V, V
please refer to Application Note Thermal Resistance
= 0 V, V
= 0 V, V
D
1)
G2S
G1
G1
G2S
DS
= 20 µA
= 60 k ,
= 50 k ,
= 0 V
= 4.5 V
DS
DS
= 0 V
A
= 0 V
= 0 V
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
6
6
-
-
-
-
-
-
-
Values
Value
typ.
0.7
0.6
14
14
150
-
-
-
-
-
-
max.
15
15
50
50
10
BG3123...
2006-06-21
-
-
-
-
-
Unit
V
µA
nA
µA
mA
V
Unit
K/W