BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 3123R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 3123R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5V@Amp A/30@5V@Amp BdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BG3123RE6327XT; SP000015126

Output characteristics I
V
amp. A
Gate 1 current I
V
amp. A
G2S
DS
mA
µA
120
= 5V, V
18
14
12
10
80
60
40
20
= 4V, V
8
6
4
2
0
0
0
0
2
G2S
0.4
G1S
G1
4
= Parameter in V
= Parameter in V
= (V
0.8
6
G1S
D
8
1.2
=
)
(V
10
DS
V
)
V
V
V
1.5
1.4
1.3
1.2
4
3.5
3
2.5
2
DS
G1S
14
2
5
Output characteristics I
V
amp. B
Gate 1 current I
V
amp. B
G2S
DS
mA
120
µA
= 5V, V
18
14
12
10
80
60
40
20
= 4V, V
8
6
4
2
0
0
0
0
2
G2S
0.4
G1S
4
G1
= Parameter in V
= Parameter in V
= (V
0.8
6
G1S
D
8
1.2
=
)
10
(V
BG3123...
2006-06-21
DS
V
1.7
1.6
1.5
1.3
1.0
)
V
V
V
DS
G1S
2.5
4
3
2
14
2