BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet
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BG 3123R E6327
Specifications of BG 3123R E6327
SP000015126
Related parts for BG 3123R E6327
BG 3123R E6327 Summary of contents
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DUAL N-Channel MOSFET Tetrode Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) Optimized for UHF (amp. B) and VHF (amp. A) Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation ...
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Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...
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Electrical Characteristics at T Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance MHz, amp MHz, amp. B Output capacitance MHz, amp. ...
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Total power dissipation P amp. A 300 mW 200 150 100 Drain current G2S amp ...
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Output characteristics 4V Parameter in V G2S G1S amp Gate 1 current G1S V ...
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Gate 1 forward transconductance 5V G2S amp Drain current G1S V = ...
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Drain current amp 5V 4V G2S G1 (connected =gate1 supply voltage ...
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Crossmodulation V = (AGC) unw amp.A 120 dBµV 100 Crossmodulation amp.B 120 dBµV 100 ...
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Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG3123... 4n7 RL 50 Semibiased 2006-06-21 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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