BG 3123R E6327 Infineon Technologies, BG 3123R E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 3123R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 3123R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA, 20mA
• Noise Figure: 1.8dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5V@Amp A/30@5V@Amp BdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BG3123RE6327XT; SP000015126

Total power dissipation P
amp. A
Drain current I
V
amp. A
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
120 °C
µA
S
)
T
I
G1
S
150
70
4
Total power dissipation P
amp. B
Drain current I
V
amp. B
G2S
mW
mA
300
200
150
100
50
16
12
10
= 4V
0
8
6
4
2
0
0
0
20
10
D
40
20
= (I
60
30
G1
)
80
40
tot
100
= (T
50
BG3123...
2006-06-21
120 °C
S
µA
)
T
I
G1
S
150
70