BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 9

• Manufacturer Part Number: BLF246B,112
• Description: TRANSISTOR RF DMOS SOT161A
• Manufacturer: NXP Semiconductors

Specifications of BLF246B,112

• Package / Case: SOT-161A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 8A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 60W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 8
• Forward Transconductance (typ): 1.8S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 11@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 130000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2403; 934001090112; BLF246B; BLF246B

Philips Semiconductors
List of components class-B test circuit (see Figs 11 and 12)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (
2003 Aug 04
C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF
C3
C4
C5, C22, C24
C6
C7, C9, C12,
C14, C17, C19
C8, C10
C11, C20
C13, C18
C15, C16, C21
C23
L1, L3, L22, L24
L2, L23
L4, L5
L6, L7
L8, L9
L10, L11
L12, L15
L13, L14
L16, L17
L18, L19
L20, L21
R1, R2
R3, R4
R5, R6
R7, R8
VHF push-pull power MOS transistor
COMPONENT
1
of the board are connected together by means of copper straps and hollow rivets.
16
inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side
film dielectric trimmer
multilayer ceramic chip capacitor; note 1 180 pF
film dielectric trimmer
multilayer ceramic chip capacitor; note 2 100 pF
multilayer ceramic chip capacitor; note 1 100 nF
multilayer ceramic chip capacitor; note 1 680 pF
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor; note 1 82 pF
multilayer ceramic chip capacitor; note 1 33 pF
stripline; note 3
semi-rigid cable
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
grade 3B Ferroxcube wideband
HF choke
4 turns enamelled 1 mm copper wire
stripline; note 3
stripline; note 3
stripline; note 3
metal film resistor
10 turns potentiometer
metal film resistor
metal film resistor
DESCRIPTION
9
4 to 40 pF
5 to 60 pF
10 nF
10 F, 63 V
55
50
50
50
50
50
50 nH
50
50
50
0.4 W, 10
50 k
0.4 W, 205 k
1 W, 21.5
VALUE
111
length 111 mm
ext. dia 2.2 mm
38
9
8
11
length 6.5 mm
int. dia. 4 mm
leads 2
16
25
3
DIMENSIONS
2.8 mm
2.8 mm
2.8 mm
2.8 mm
2.8 mm
2.8 mm
2.8 mm
2.5 mm
5 mm
r
= 4.5); thickness
Product specification
2222 809 08002
2222 809 08003
2222 852 47104
2222 852 47103
4312 020 36642
CATALOGUE No.
BLF246B