BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 4

• Manufacturer Part Number: BLF246B,112
• Description: TRANSISTOR RF DMOS SOT161A
• Manufacturer: NXP Semiconductors

Specifications of BLF246B,112

• Package / Case: SOT-161A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 8A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 60W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 8
• Forward Transconductance (typ): 1.8S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 11@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 130000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2403; 934001090112; BLF246B; BLF246B

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Aug 04
Per transistor section
V
I
I
V
g
R
I
C
C
C
SYMBOL
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF push-pull power MOS transistor
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
V
V
V
V
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 10 mA; V
= 1.5 A; V
= 1.5 A; V
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
D
CONDITIONS
4
DS
DS
DS
DS
= 10 mA
DS
GS
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
DS
DS
= 10 V
= 10 V
= 10 V
= 10 V
GROUP
= 0
W
O
Q
R
U
P
S
T
V
X
Y
Z
65
2
1.2
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
1.8
0.4
10
125
75
11
TYP.
LIMITS
(V)
Product specification
BLF246B
2
1
4.5
0.75
MAX.
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
S
A
pF
pF
pF
UNIT
A