BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 10

• Manufacturer Part Number: BLF246B,112
• Description: TRANSISTOR RF DMOS SOT161A
• Manufacturer: NXP Semiconductors

Specifications of BLF246B,112

• Package / Case: SOT-161A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 8A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 60W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 8
• Forward Transconductance (typ): 1.8S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 11@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 130000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2403; 934001090112; BLF246B; BLF246B

Philips Semiconductors
2003 Aug 04
handbook, full pagewidth
VHF push-pull power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
110
strap
strap
L1
rivet
L3
L2
Fig.12 Component layout for 175 MHz class-B test circuit.
C1
C2
C3
L4
L5
C4
rivet
rivet
C5
C10
R2
C7
C8
R1
C9
L6
strap
strap
L7
V G
V G
C6
200
L10
L11
10
L8
L9
strap
strap
C16
C15
C17
C14
L15
L12
L16
L17
L14
L13
C22
C21
C19
C11
R3
R7
V D
V D
L18
L19
C12
C20
C13
C18
rivet
rivet
C23
C24
L20
L21
C25
C26
L23
L22
rivet
L24
MGR750
strap
strap
Product specification
BLF246B