BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet

TRANSISTOR RF DMOS SOT161A

BLF246B,112

Manufacturer Part Number
BLF246B,112
Description
TRANSISTOR RF DMOS SOT161A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF246B,112

Package / Case
SOT-161A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
19dB
Voltage - Rated
65V
Current Rating
8A
Current - Test
50mA
Voltage - Test
28V
Power - Output
60W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.75 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
60W
Power Gain (typ)@vds
19@28VdB
Frequency (max)
175MHz
Package Type
CDFM
Pin Count
8
Forward Transconductance (typ)
1.8S
Drain Source Resistance (max)
750@10Vmohm
Input Capacitance (typ)@vds
125@28VpF
Output Capacitance (typ)@vds
75@28VpF
Reverse Capacitance (typ)
11@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
2
Power Dissipation (max)
130000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2403
934001090112
BLF246B
BLF246B
Product specification
Supersedes data of 2001 Oct 10
andbook, halfpage
DATA SHEET
BLF246B
VHF push-pull power MOS
transistor
DISCRETE SEMICONDUCTORS
M3D075
2003 Aug 04

Related parts for BLF246B,112

BLF246B,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 M3D075 2003 Aug 04 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Dual silicon N-channel enhancement mode vertical D-MOS push-pull ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor section unless otherwise specified V drain-source voltage DS V gate-source voltage GS I drain current (DC) D ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per transistor section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 6 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 24 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 25 handbook, halfpage G p (dB Class-B operation 4 ...

Page 8

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth input 175 MHz. 2003 Aug L12 L10 ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components class-B test circuit (see Figs 11 and 12) COMPONENT C1, C2, C25, C26 multilayer ceramic chip capacitor; note film dielectric trimmer C4 multilayer ceramic chip capacitor; ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth strap rivet 110 strap Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor 10 handbook, halfpage 100 200 Class-B operation ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 8 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 2.93 ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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