BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 3

• Manufacturer Part Number: BLF246B,112
• Description: TRANSISTOR RF DMOS SOT161A
• Manufacturer: NXP Semiconductors

Specifications of BLF246B,112

• Package / Case: SOT-161A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 8A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 60W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 8
• Forward Transconductance (typ): 1.8S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 11@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 130000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2403; 934001090112; BLF246B; BLF246B

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Aug 04
Per transistor section unless otherwise specified
V
V
I
P
T
T
R
R
handbook, halfpage
SYMBOL
SYMBOL
D
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
10
(A)
I D
50
10
mb
1
1
1
= 25 C.
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation T
storage temperature
junction temperature
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
(1)
PARAMETER
Fig.2 DC SOAR.
PARAMETER
10
(2)
V DS (V)
DSon
mb
.
MRA932
25 C total device; both sections equally loaded
10
2
total device; both sections equally
loaded
total device; both sections equally
loaded
CONDITIONS
3
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
CONDITIONS
P tot
(W)
160
120
80
40
0
0
Fig.3 Power derating curves.
40
(2)
(1)
80
MIN.
65
VALUE
1.35
0.25
Product specification
120
65
8
130
200
BLF246B
T h ( C)
MAX.
20
150
MGR738
160
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT