2N5555 Fairchild Semiconductor, 2N5555 Datasheet
2N5555
Specifications of 2N5555
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2N5555 Summary of contents
Page 1
... Symbol Total Device Dissipation P D Derate above 25°C R Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 TO- Gate 2. Source 3. Drain T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter ...
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... Zero-Gate Voltage Drain Current * DSS R (on) Drain-Source On Resistance DS Small Signal Characteristics C Input Capacitance iss C Reverse Transfer Capacitance rss * Pulse Test: Pulse Width £ 300ms, Duty Cycle = 2% © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition I = 10mA 15V 25° ...
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... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...