2N5950 Fairchild Semiconductor, 2N5950 Datasheet

AMP RF N-CHAN 30V TO-92

2N5950

Manufacturer Part Number
2N5950
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of 2N5950

Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
15mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
2.5 V to 6 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5950
Manufacturer:
FSC
Quantity:
15
Part Number:
2N5950
Manufacturer:
FSC
Quantity:
5 000
2N5950 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
2N5950
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
V
I
T
P
R
R
GF
J
DG
GS
D
θJC
θJA
Symbol
, T
Symbol
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T
a
=25°C unless otherwise noted
T
Parameter
Parameter
a
=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
1
1
TO-92
-55 ~ 150
Value
Max.
350
125
357
-30
2.8
30
10
September 2007
www.fairchildsemi.com
Units
Units
mW/°C
°C/W
°C/W
mW
mA
°C
V
V

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2N5950 Summary of contents

Page 1

... Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA © 2007 Fairchild Semiconductor Corporation 2N5950 Rev. 1.0.0 TO- Gate 2. Source 3. Drain T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter 1 ...

Page 2

... Small Signal Characteristics g Forward Transferconductance fs C Input Capacitance iss C Reverse Transfer Capacitance rss * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2% © 2007 Fairchild Semiconductor Corporation 2N5950 Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition I = 1.0μ 25V 25°C ...

Page 3

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N5950 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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