MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 4

• Manufacturer Part Number: MRF1518NT1
• Description: IC MOSFET RF N-CHAN PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRF1518NT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 4mA
• Power Dissipation Pd: 62.5W
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 8W
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 20V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF1518NT1; MRF1518NT1TR

MRF1518NT1
4
17
15
13
11
12
10
12
11
10
9
7
5
4
2
0
9
8
7
6
5
4
3
2
8
6
0
0
8
Figure 6. Output Power versus Biasing Current
Figure 8. Output Power versus Supply Voltage
470 MHz
500 MHz
1
520 MHz
450 MHz
450 MHz
520 MHz
9
Figure 4. Gain versus Output Power
500 MHz
2
200
10
V
DD
P
3
I
out
DQ
470 MHz
500 MHz
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
4
11
400
520 MHz
5
12
6
600
TYPICAL CHARACTERISTICS, 450 - 520 MHz
13
470 MHz
7
V
V
P
DD
I
P
DD
in
DQ
8
in
14
= 26.2 dBm
= 12.5 Vdc
= 26.2 dBm
= 12.5 Vdc
= 150 mA
800
9
450 MHz
15
10
1000
16
11
80
70
60
50
40
30
20
10
70
65
60
55
50
45
40
35
30
80
75
70
65
60
55
50
45
40
35
30
0
0
0
Figure 9. Drain Efficiency versus Supply Voltage
8
Figure 5. Drain Efficiency versus Output Power
470 MHz
450 MHz
1
9
2
Figure 7. Drain Efficiency versus
200
10
3
P
V
I
out
DQ
DD
, OUTPUT POWER (WATTS)
, SUPPLY VOLTAGE (VOLTS)
, BIASING CURRENT (mA)
4
Biasing Current
11
400
520 MHz
5
500 MHz
500 MHz
520 MHz
520 MHz
12
6
450 MHz
500 MHz
7
600
Freescale Semiconductor
13
450 MHz
8
470 MHz
470 MHz
V
V
P
I
P
DD
DD
in
DQ
in
14
9
= 26.2 dBm
= 12.5 Vdc
= 26.2 dBm
= 12.5 Vdc
= 150 mA
800
RF Device Data
10
15
11
1000
12
16