MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 18

IC MOSFET RF N-CHAN PLD-1.5

MRF1518NT1

Manufacturer Part Number
MRF1518NT1
Description
IC MOSFET RF N-CHAN PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1518NT1

Transistor Type
N-Channel
Frequency
520MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PLD-1.5
Configuration
Single Dual Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
4mA
Power Dissipation Pd
62.5W
Rf Transistor Case
PLD-1.5
Termination Type
SMD
Output Power Pout
8W
Rohs Compliant
Yes
Filter Terminals
SMD
Gate-source Voltage
20V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MRF1518NT1
MRF1518NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1518NT1
Manufacturer:
FREESCALE
Quantity:
1 400
Company:
Part Number:
MRF1518NT1
Quantity:
255
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MRF1518NT1
18
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
10
11
June 2008
June 2009
Date
• Changed Power Gain from 13.5 dB to 13 dB in Functional Tests table on p. 2 and corrected specified
• Added Product Documentation and Revision History, p. 18
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 18
performance values for power gain and efficiency on p. 1 to match typical performance values in the
functional test. Past two years of production data shows Power Gain typical value at 13 dB.
process as described in Product and Process Change Notification number, PCN13516, p. 1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data

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