MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 10

• Manufacturer Part Number: MRF1518NT1
• Description: IC MOSFET RF N-CHAN PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRF1518NT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 4mA
• Power Dissipation Pd: 62.5W
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 8W
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 20V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF1518NT1; MRF1518NT1TR

MRF1518NT1
10
19
17
15
13
11
12
10
12
11
10
9
7
6
2
0
9
8
7
6
5
4
3
2
8
4
0
0
8
155 MHz
1
Figure 31. Gain versus Output Power
9
2
Figure 33. Output Power versus
Figure 35. Output Power versus
200
135 MHz
10
V
3
DD
P
135 MHz
175 MHz
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
4
, BIASING CURRENT (mA)
Biasing Current
Supply Voltage
11
400
5
155 MHz
12
6
600
7
TYPICAL CHARACTERISTICS, 135 - 175 MHz
13
8
155 MHz
V
P
I
P
DQ
DD
in
in
V
14
9
= 24.5 dBm
175 MHz
= 24.5 dBm
DD
= 150 mA
= 12.5 Vdc
800
= 12.5 Vdc
10
175 MHz
135 MHz
15
11
1000
12
16
80
70
60
50
40
30
20
10
70
65
60
55
50
45
40
35
30
80
75
70
65
60
55
50
45
40
35
30
0
0
0
8
Figure 32. Drain Efficiency versus Output
1
9
Figure 36. Drain Efficiency versus
2
135 MHz
175 MHz
Figure 34. Drain Efficiency versus
155 MHz
200
135 MHz
155 MHz
175 MHz
10
3
P
V
out
135 MHz
DD
I
DQ
, OUTPUT POWER (WATTS)
, SUPPLY VOLTAGE (VOLTS)
4
, BIASING CURRENT (mA)
Supply Voltage
Biasing Current
11
400
5
Power
155 MHz
12
6
175 MHz
7
600
Freescale Semiconductor
13
8
V
V
P
I
P
DQ
DD
DD
in
in
14
9
= 24.5 dBm
= 24.5 dBm
= 150 mA
= 12.5 Vdc
= 12.5 Vdc
800
RF Device Data
10
15
11
1000
12
16