MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 12

• Manufacturer Part Number: MRF1518NT1
• Description: IC MOSFET RF N-CHAN PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRF1518NT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 4mA
• Power Dissipation Pd: 62.5W
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 8W
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 20V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF1518NT1; MRF1518NT1TR

MRF1518NT1
12
Z
Z
in
OL
* = Complex conjugate of the load
V
MHz
450
470
500
520
= Complex conjugate of source
DD
f
impedance with parallel 15 Ω
resistor and 82 pF capacitor in
series with gate. (See Figure 1).
impedance at given output power,
voltage, frequency, and η
= 12.5 V, I
f = 450 MHz
4.85 +j3.71
4.63 +j3.84
3.52 +j3.92
520
4.9 +j2.85
520
DQ
Z
Z
Ω
Note: Z
= 150 mA, P
in
o
= 10 Ω
Z
in
OL
f = 450 MHz
Z
OL
6.42 +j3.23
4.59 +j3.61
4.72 +j3.12
3.81 +j3.27
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 38. Series Equivalent Input and Output Impedance
out
*
Z
= 8 W
OL
Ω
D
*
> 50 %.
Input
Matching
Network
Z
in
Device
Under Test
f = 850 MHz
Z
Z
o
in
Z
= 10 Ω
OL
*
f = 820 MHz
Z
Z
in
OL
* = Complex conjugate of the load
f = 850 MHz
V
MHz
820
830
840
850
= Complex conjugate of source
Output
Matching
Network
DD
f = 820 MHz
f
impedance.
impedance at given output power,
voltage, frequency, and η
= 12.5 V, I
Z
OL
*
1.42 - j0.32
1.39 - j0.21
1.32 - j0.16
1.23 - j0.13
DQ
Z
Ω
= 150 mA, P
in
2.34 +j0.23
2.36 +j0.47
2.40 +j0.69
2.37 +j0.79
Freescale Semiconductor
out
Z
= 8 W
OL
Ω
D
*
> 50 %.
RF Device Data