MRF1518NT1 Freescale Semiconductor, MRF1518NT1 Datasheet - Page 16

• Manufacturer Part Number: MRF1518NT1
• Description: IC MOSFET RF N-CHAN PLD-1.5
• Manufacturer: Freescale Semiconductor

Specifications of MRF1518NT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 4A
• Current - Test: 150mA
• Voltage - Test: 12.5V
• Power - Output: 8W
• Package / Case: PLD-1.5
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 4mA
• Power Dissipation Pd: 62.5W
• Rf Transistor Case: PLD-1.5
• Termination Type: SMD
• Output Power Pout: 8W
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 20V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF1518NT1; MRF1518NT1TR

MOUNTING
sumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD - 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
AMPLIFIER DESIGN
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
MRF1518NT1
16
The specified maximum thermal resistance of 2°C/W as-
Impedance matching networks similar to those used with
Large - signal impedances are provided, and will yield a good
first pass approximation.
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
S - parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small - Signal Design
Using Two - Port Parameters” for a discussion of two port
network theory and stability.
Since RF power MOSFETs are triode devices, they are not
Two - port stability analysis with this device’s
Freescale Semiconductor
RF Device Data