BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 9

TRANSISTOR RF DMOS SOT262A1

BLF368,112

Manufacturer Part Number
BLF368,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF368,112

Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
225MHz
Gain
13.5dB
Voltage - Rated
65V
Current Rating
25A
Current - Test
250mA
Voltage - Test
32V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
300W
Power Gain (typ)@vds
15@28VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
495@32VpF
Output Capacitance (typ)@vds
340@32VpF
Reverse Capacitance (typ)
40@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW Class-AB
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2390
933978490112
BLF368
BLF368
Philips Semiconductors
List of components class-AB test circuit (see Figs 12 and 13)
2003 Sep 26
C1, C2
C3
C4
C5
C6, C7, C9, C10,
C12, C15, C31, C34
C8, C11, C16, C21,
C32
C17, C20, C33
C22
C23
C24, C28
C25, C26
C27
C29, C30
L1, L3, L22, L24
L2, L23
L4, L5
L6, L7
L8, L9
L10, L11
L12, L15
L13, L14
L16, L17
L18, L19
L20, L21
R1, R6
R2, R5
R3, R4
VHF push-pull power MOS transistor
COMPONENT
semi-rigid cable; note 3
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
grade 3B Ferroxcube wideband
HF choke
2 turns enamelled 1.6 mm copper
wire
stripline; notes 2 and 4
stripline; notes 2 and 4
stripline; notes 2 and 4
10 turns potentiometer
metal film resistor
metal film resistor
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
stripline; note 2
DESCRIPTION
9
2
parallel
500 V
2 to 9 pF
47 pF, 500 V
5 to 60 pF
1 nF, 500 V
100 nF, 50 V
10 F, 63 V
82 pF, 500 V
10 pF
parallel, 500 V
2 to 18 pF
39 pF
parallel, 500 V
18 pF, 500 V
3
parallel, 500 V
50
50
43
43
43
43
2 in parallel
25 nH
43
43
43
50 k
0.4 W, 1 k
0.4 W, 536
56 pF in
100 pF in
VALUE
30 pF in
47 pF in
18 pF,
4.8
ext. conductor
length 80 mm
ext. dia 3.6 mm
6
6
6
6
space 2.5 mm
int. dia. 5 mm
leads 2
6
6
6
DIMENSIONS
32.5 mm
10.5 mm
3 mm
10.5 mm
3 mm
35 mm
9 mm
80 mm
7 mm
Product specification
2222 809 09005
2222 809 08003
2222 852 47104
2222 809 09006
4312 020 36642
CATALOGUE NO.
BLF368

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